With an off-board height of 0.4 mm, they are suited for wearable technology as well as other space-constrained consumer products. Diodes Incorporated's initial DFN0606 bipolar transistor offerings are two NPN and PNP devices with power dissipation up to 830 mW.
The 40V-rated MMBT3904FZ and MMBT3906FZ boost power density and also provide a 200 mA collector current; while the 45V-rated BC847BFZ and BC857BFZ provide a collector current of 100 mA. All devices switch on at a base-emitter voltage of less than 1V, enabling them to be fully turned on under conditions of very low portable power.
Diodes Inc.; www.diodes.com