Broadband RF switches offer isolation, power handling & low loss

May 23, 2016 // By Graham Prophet
Presented as being drop-in compatible with GaAs (gallium arsenide) switches, IDT’s 50 to 8000 MHz broad bandwidth, 50 Ohm absorptive SPDT switches are specified with high-isolation, low-loss, and high linearity for a wide variety of applications.

IDT F2932 and F2933 are silicon-based, low-distortion 50-ohm single-pole, double-throw (SPDT) switches. With industry-standard 4 x 4 mm 16-pin QFN packages and drop-in compatible footprints and control, their combination of specs includes isolation of 66dB; low distortion of 64 dBm IIP3 @ 15 dBm tones, 1 MHz channel spacing; insertion loss of 0.93 dB; and P1dB of >35 dBm


Compared to GaAs-based switches, IDT says this represents better RF performance, greater reliability, easier integration and a lower overall cost.


F2932 and F2933 offer similar RF performance, pin out and control, with the F2932 having an additional Enable/Disable feature allowing all RF paths to be put into an off state and disabling the VCTL feature.


IDT RF Products;