Compact silicon carbide hybrid power modules at 3300V and 1500A

November 26, 2014 // By Graham Prophet
From Toshiba this plastic module combines IEGT and SiC diode to improve efficiency and reduce size, weight and noise in high-power switching applications

Toshiba Electronics Europe (TEE) has extended its family of silicon carbide (SiC) devices with a high-efficiency 3300V, 1500A power module. The MG1500FXF1US71 PMI (plastic case module IEGT) integrates an N-channel IEGT (injection-enhanced gate transistor) and an SiC fast recovery diode (FRD) into a package with a footprint of 140mm x 190mm. Target applications include rail traction, industrial motor control, renewable energy systems and electricity transmission and distribution.

Use of an SiC Schottky barrier diode (SBD) significantly decreases reverse recovery current - and leads to a corresponding decrease in turn-on loss - compared to silicon alternatives. A combination of the diode and an improved internal package design to reduce stray inductances allows the MG1500FXF1US71 to operate with a reverse recovery loss up to 97% lower than a module that uses a conventional silicon diode.

The MG1500FXF1US71 offers an isolation voltage rating of 6000VAC (rms for one minute) and can handle a peak turn-off collector current of 3000A. Collector power dissipation (at 25°C) is 5000W. An operating temperature range of -40°C to 150°C is compatible with the extended temperature environments found in the target applications.

During development the 3300V, 1500A hybrid module was incorporated into a rail traction inverter design. By using the module the overall size of the motor control sub-assembly (including cooling system) was reduced by 40%. In addition, use of the module helped to reduce acoustic noise.

Toshiba Electronics Europe;