Completely characterise power devices with one box

May 05, 2014 // By Graham Prophet
Presented as the first power device analyser for power circuit design, this instrument characterises all power device parameters, such as Ron, Leakage, Ciss, Coss, Crss and Gate Charge

The Agilent B1506A is a single-box solution that automatically characterises all power device parameters across a wide range of operating conditions and temperatures (-50 to +250°C), at up to 1500A and 3 kV.

Circuit designers employ power devices in a wide range of products, therefore requiring an accurate, thorough understanding of their performance over a wide range of conditions. However, power device data sheets typically show behaviour across only a limited range of operating conditions, and obtaining key datasheet parameters is not a straightforward process. By providing an automated, easy-to-use way to extract power device parameters, Agilent’s B1506A Power Device Analyser for Circuit Design overcomes these challenges.

The B1506A measures and evaluates all kinds of parameters, including IV parameters (e.g., breakdown voltage and on-resistance); three-terminal capacitances (C iss, C oss and C rss) with high-voltage bias; gate charge; switching time; and power losses. It also provides a fully automated measurement of temperature dependency for all parameters, from -50 to +250 ºC, and seamlessly integrates with Thermal Plate or Thermostream from inTest. An intuitive GUI enables a user to extract critical device parameters across a wide range of current, voltage and temperature conditions. Such capabilities make the B1506A ideal for helping designers select the right power devices for their power electronic circuits, and for power electronics manufacturers conducting incoming device inspection and failure analysis.

“While the power devices used in power electronics circuits are key to meeting industry requirements for low power loss and high switching frequency, until now no suitable solution has existed for evaluating all of the characteristics of those devices,” said Masaki Yamamoto, general manager of Agilent’s Hachioji Semiconductor Test Division.

Features include:

- Measurement of all IV parameters (R on, BV, Leakage, V th, V sat, etc.), and transistor input, output and reverse transfer capacitances (C iss, C oss, C rss, C ies, C oes, C