Cree introduces 150-mm 4HN silicon carbide epitaxial wafers

August 31, 2012 // By Julien Happich
Cree announced the availability of high quality, low micropipe 150 mm 4H n-type silicon carbide (SiC) epitaxial wafers with highly uniform epitaxial layers as thick as 100 microns.

SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components, including light-emitting diodes (LEDs), power switching devices and RF power transistors for wireless communications. The 150-mm diameter single crystal SiC substrates will enable cost reductions and increased throughput, while bolstering the continued growth of the SiC industry.

The 150-mm 4H n-type SiC epitaxial wafers are available for immediate purchase in limited quantities.