DC-DC converter provides power to IGBT/SiC FET gate drives

July 28, 2016 // By Graham Prophet
Murata’s MGJ1 1 Watt DC-DC converter series drive high and low-side gate circuits such as those using IGBTs and SiC MOSFETs for optimal efficiency. With high isolation characteristics, up to 5.2 kVDC, the MGJ1 offers the nominal output voltage combinations of +15/-5, +15/-9 or +19/-5 VDC. The series also offers a choice of +5, +12 or +24 VDC input.

The MGJ1 series is configured for high dV/dt immunity, which aids reliable and continued operation in fast switching circuits, and partial discharge performance that contributes to a long service life. Low input-to-output coupling capacitance, typically 5 pF, assists in reducing the affects of EMI.


The series suits a broad range of medical applications for which certification to ANSI/AAMI ES60601-1 to 2 MOOPs is pending. The converter also conforms to the UL 60950 (pending) for reinforced insulation and by incorporating a 9.3 mm creepage and clearance space helps safety agency approvals for high working voltage applications.


Murata Europe; www.murata.com