DC/DCs have 5.2 kV isolation to power SiC MOSFET drivers

April 25, 2016 // By Graham Prophet
Recom (Neu-Isenburg, Germany) has optimised two series of 2W DC/DC converters specifically for a role in powering SiC MOSFETs. One of the challenges of driving SiC MOSFETs, the company notes, is the high frequency and high voltage at which they are switched.

High potentials between the control and power side of a SiC MOSFET application can wear down isolation barriers, eventually causing them to fail. The RxxP22005D and RKZ-xx2005D series come with 3 kVDC, 4 kVDC, and 5.2 kVDC isolation to ensure that the isolation barrier stands up to even the harshest tests. Switching SiC MOSFETs requires turn-on and turn-off voltages which are not common for other IGBT or MOSFET applications. The RxxP22005D and RKZ-xx2005D series are available with input voltages of 5V, 12V, 15V or 24V and feature asymmetric outputs of +20V and -5V to efficiently and effectively switch the SiC MOSFET.


These converters come fully equipped with an ultra-low parasitic capacitance and power sharing capabilities, and they are all fully compliant to UL-60950-1, RoHS2, and REACH.


Recom Electronic; www.recom-electronic.com