DDR memory-termination linear regulator for space applications

July 12, 2016 // By Graham Prophet
This radiation-hardened power-management device from Texas Instruments uses an ultra-small form factor to host a double-data-rate (DDR) memory linear regulator for space applications.

The TPS7H3301-SP is, TI asserts, the only DDR regulator immune to single-event effects up to 65 megaelectron volts per centimeter squared (MeV-cm ²), powering space-satellite payloads including single-board computers, solid-state recorders and other memory applications.


Integrating two monolithic power field-effect transistors (FETs) for source and sink termination and an internal voltage reference, the TPS7H3301-SP is up to 50% smaller than a switch-mode regulator DDR solution. TI claims superior radiation performance: with high level of immunity, the device withstands a total ionizing dose of up to 100 krad. Its stable termination power supply ensures that single-event effects do not impact read-and-write operations.


Designers can pair the TPS7H3301-SP with the TPS50601-SP buck converter to create the smallest complete power solution for DDR memory. As with TI’s entire space portfolio, designers have access to a full suite of support resources, including comprehensive radiation reports, on-demand training and Simulation Program with Integrated Circuit Emphasis (SPICE) models.


The device is controlled under U.S. Department of Commerce Export Control Classification Number (ECCN) EAR99.


The TPS7H3301-SP is available in a 16-pin dual-ceramic flat package that is Qualified Manufacturer List (QML) Class V and 100 krad (silicon) radiation hardness assurance (RHA) qualified (5962R1422801VXC).


TI; ti.com/TPS7H3301-SP-pr-eu