Deep-trench-process superjunction MOSFETs simplify design-in

May 11, 2016 // By Graham Prophet
Presenting the technology as its fifth generation - DTMOS V – process, Toshiba says that its latest series of MOSFETs has been optimised for “easy handling” (lack of design issues), combined with increased efficiency, easing design in and reducing EMI noise in power switching applications

Superjunction (SJ) deep trench semiconductor technology, high-efficient power MOSFETs in the DTMOS V process operate with lower EMI noise and reduced on resistance compared to their predecessors. DTMOS V is based on a single epitaxial process involving ‘deep trench etching’ followed by P-type epitaxial growth. The deep trench filling process results in a narrowing of cell pitch and a lowering of RDS(ON) when compared with more conventional planar processes. Toshiba’s deep trench process allows an improved thermal coefficient of R DS(ON) compared to conventional super junction MOSFETs using multi epitaxial growth process, the company says, adding that alternative processes involve more complex growth of epitaxial layers.


The parts come in DPAK and TO-220 outlines, with 600 and 650V ratings; Toshiba says that the dominant specifying parameter is on-resistance, “For [applications such as] lighting, we don't even mention current.”


With DTMOS V, Toshiba has been able to reduce R DS(ON) of the DPAK TK290P60Y by up to 17% compared with the lowest R DS(ON) available from the TK12P60W DTMOS IV MOSFET. The company has also further optimised the trade-off between switching performance and EMI noise.


DTMOS V MOSFETs will simplify the design and improve the performance of power conversion applications, including switching power supplies, power factor correction (PFC) designs, LED lighting and other AC/DC applications. The first MOSFETs based on the fifth generation process will offer ratings of 600V and 650V and be supplied in DPAK (TO-252) and TO-220SIS (smart isolation) packaging. Maximum ON resistance ratings will range from 0.29 Ω to 0.56Ω.