Discrete FETs take 0.36 mm² PCB area in the most space-critical designs

January 09, 2015 // By Graham Prophet
Diodes Inc. has extended its line of ultra-small discrete products for space-critical product design. The company has announced a trio of small-signal MOSFETs in the 0.6 x 0.6 mm, DFN0606 package: 20V and 30V rated N-channel transistors and a 30V rated P-channel part.

Each device takes 40% less board space than the commonly used DFN1006 (aka SOT883) packaged MOSFETs, suiting them to next-generation wearable tech, tablets and smartphones.

Able to deliver better or equivalent electrical performance than many of the larger package parts, the DMN2990UFZ (20V nMOS), the DMN31D5UFZ (30V nMOS) and DMP32D9UFZ (30V pMOS) have been designed to minimise on-state resistance while still maintaining a superior switching performance. A typical threshold voltage of less than 1V means a lower 'turn-on', suiting single-cell operation.

These tiny MOSFETs are suited for high-efficiency power-management duties and as general-purpose interfacing and simple analogue switches. The DFN0606 parts achieve a power dissipation of 300mW.

The DFN0606 packaged small signal MOSFETs are priced at $0.08 (10,000).

Diodes; www.diodes.com