The 30V and 60V devices join the company's existing 40V offering. All of the devices will be available in ultra-compact, thermally efficient DSOP Advance package options that significantly improve heat dissipation through dual-sided cooling.
The package directly attached copper tabs to the top (source) and bottom (drain) of the die, and makes the outer surface of each piece of copper available on the top and bottom faces of the package, where you can directly mount a heatsink with low low thermal resistance. Care will be needed in mechanical/insulation design, as any projection of the heatsink beyond the package edge will mean that drain and source potentials may be physically separated by only the package thickness.
Comprising one 30V device and one 60V device, the new N-channel MOSFETs are based on Toshiba's next-generation U-MOS IX-H trench semiconductor process. This process has been designed to deliver optimum efficiency across a wide range of load conditions by reducing on-resistance (R DS(ON)) and improving switching efficiency by reducing output charge (Q OSS).
Toshiba aims the MOSFETs at power management circuits including high-side and low-side switching in DC-DC conversion and secondary side synchronous rectification in AC-DC designs. The technologies are also suitable for motor control and for protection circuit modules in electronic equipment based on Lithium ion (Li-ion) batteries.
At a voltage (V GS) of 10V, the maximum R DS(ON) rating for the 30V MOSFET is 0.6 mΩ, while typical C OSS is 2160 pF. The 60V item offers R DS(ON) and typical C OSS ratings of 1.3 mΩ and 960 pF.
The two new UMOS IX-H MOSFETs are available in low-profile surface mount packages DSOP Advance. Both have a PCB footprint of just 5mm x 6mm. Choosing the DSOP Advance solution can help to significantly reduce system temperatures, allowing the use of smaller heatsinks or even eliminating the need for a heatsink altogether. All of the MOSFETs will operate with channel