Dual SiC MOSFET drivers, in distribution

January 19, 2015 // By Graham Prophet
Mouser Electronics has the PT62SCMDxx dual SIC MOSFET driver boards from Cree. Designed to drive the CREE CAS300M17BM2 SIC MOSFET modules, the PT62SCMD12 and PT62SCMD17 single-board solutions are dual silicon carbide (SiC) MOSFET gate drivers optimized to ensure maximum performance for SiC modules.

These boards are developed for Cree by Prodrive Technologies and are production-ready, with all the features required for an IGBT module gate driver. Featuring a power supply range from 15V to 24V, the two single-board solutions provide different driving capabilities - the PT62SCMD12 is a 1200V driver, whereas the PT62SCMD17 is a 1700V driver. Each SIC MOSFET driver solution provides low jitter at 1nsec (typical), gate driving at +20V/-6V, switchable frequencies up to 125 kHz, and output currents up to ±20A with high dV/dt immunity. Both solutions require no optocouplers, and communicate through an RS422 input interface.

A built-in dead-time generator enables both solutions to be fully adjustable for both dead and blanking time. Other features of the PT62SCMDxx Dual SIC MOSFET Drivers include over-current protection and under- and over-voltage lockout.

The Cree PT62SCMD12 and PT62SCMD17 single-board solutions can control multiple MOSFETs in parallel, in HF resonant converters/inverters, solar and wind inverters, UPS and SMPS devices, motor drives and traction-based applications.

Mouser; www.mouser.com/new/cree/cree-pt62scmdxx-drivers/