Explore gallium-nitride power switch driving with development board

March 15, 2013 // By Paul Buckley
Efficient Power Conversion Corporation (EPC) has introduced the EPC9010 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET).

The development board will support applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

The EPC9010 development board is a 100 V maximum device voltage, 7 A maximum output current, half bridge with onboard gate drives, featuring the EPC2016 enhancement mode (eGaN) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9010 development board is 2 x 1.5 inch and contains two EPC2016 eGaN FET in a half bridge configuration using the LM5113 gate driver from Texas Instruments as well as supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

A Quick Start Guide, http://epc-co.com/epc/documents/guides/EPC9010_qsg.pdf, is included with the EPC9010 development board for reference and ease of use.


EPC9010 development boards are priced at $99.00 each and are available for immediate delivery from Digi-Key.