Fairchild cuts losses in IGBT structures, parts “closer to theoretical limits”

May 21, 2015 // By Graham Prophet
With a new technique in device fabrication, Fairchild has disclosed, ahead of production later in 2015, a series of IGBTs that it says cut energy losses to boost power efficiency in industrial and automotive designs; losses are reduced by as much as 30% in its 4th generation 650V and 1200V IGBT devices.

The new design approach is tailored for high and medium/speed switching applications in industrial and automotive markets; enabling Fairchild to deliver advanced levels of performance with very strong latch up immunity for superior ruggedness and reliability.

Fairchild is applying an advanced high-density pitch, self-balancing cell build using a novel self-aligned contact technology for extremely high current densities and very favourable dynamic switching features over the whole temperature range from -40º C to 175º C. The new design enables 4th generation IGBTs with excellent low saturation voltage (V ce(sat) = ~ 1.65V) and low switching loss (E off = 5 µJ/A) trade off characteristics for customers to achieve higher system efficiency. Along with the new generation, Fairchild will also make available a powerful design and simulation infrastructure package calibrated for all low- and high-voltage power devices.

“Fairchild’s new approach involves extremely high electron injection efficiency enhanced by a very fine cell pitch design and hole carrier injection restricted by a new buffer structure,” said Fairchild Fellow Thomas Neyer. “These advances yield significant performance advantages and will enable Fairchild to give manufacturers new solutions for efficiently controlling large amounts of power with our IGBTs.”

Product family details for Fairchild FS4 IGBT’s will be made available in Q4 of 2015. More details, including a White Paper detailing Fairchild’s FS4 IGBT Technology, can be found on Fairchild’s IGBT product information page; www.fairchildsemi.com/products/discretes/igbts/