Fast, low-loss power FETs

February 21, 2014 // By Graham Prophet
Advanced Power Electronics has added a series of cost-effective N-channel enhancement-mode power MOSFETs offering a fast switching performance and very low on-resistance.

The AP99T03GS-HF-3 MOSFET, in TO-263 package, suits low voltage applications such as DC/DC converters, and is also available as the AP99T03GP-HF-3 in a TO-220 through-hole package for applications where a small PCB footprint or an attached heatsink is required.

Both new MOSFETs benefit from simple drive requirements and offer a fast switching performance, very low on-resistance of 2.5 mΩ, a drain-source breakdown voltage of 30V, and a continuous drain current of 120A.

APEC; www.a-powerusa.com/docs/AP99T03GPS-3.pdf