To serve the automotive industry's need for high-performance non-volatile memory technology, for example to allow data collected by sensors to be reliably stored without a delay, Fujitsu offers FRAM (ferroelectric RAM) as non-volatile, providing high-speed random access and with high write endurance. FRAM reduces system complexity and increases data integrity by allowing instant and continuous data storage in applications such as air bag data storage, event data recorders (EDR), battery management systems (BMS), automatic driving assistance systems (ADAS) or navigation and infotainment systems.
The memory is a 256 kbit FRAM with SPI interface and an extended operating voltage range of 1.8 to 3.6V. The operating temperature of this device spans -40°C to +125°C. This extended temperature range meets the standard requests from the automotive market as well as industrial applications within hot environments. MB85RS256TY offers a write endurance of 10 13 (cycles) and is housed in a standard SOP-8 package.
AEC Q100 qualifications are scheduled to be completed in July 2017.
Fujitsu Electronics Europe (FEEU); www.fujitsu.com/feeu/