Front end RF module addresses smart metering and ISM band applications

January 14, 2013 // By Julien Happich
RF Micro Devices has announced a front end RF, the single-chip RFFM6403, designed to reduces customer design time and speeds customer time-to-market in smart energy metering applications operating in the 405 to 475MHz frequency range, as well as for portable battery powered equipment and general 433/470MHz ISM band systems.

The RFFM6403 integrates a transmit high power path with a +30.5dBm PA and Tx harmonic output filtering, a transmit bypass through path with Tx harmonic output filtering, and a receive path with a low noise amplifier (LNA) with bypass mode. The FEM also features a low insertion loss/high isolation SP3T switch and separate Rx/Tx 50Ω ports, simplifying matching and providing input and output signals for both the Tx and Rx paths.

The RFFM6403 is designed for systems operating with high efficiency requirements and a minimum output power of 30 dBm. In the receive path, the Rx chain provides 16 dB of typical gain with only 5 mA of current and an excellent noise figure of 1.7 dB. The 6x6x1mm chip minimizes product footprint at the customer device while reducing external component count and associated assembly costs.

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