GaAs RF power amplifiers deliver 1-W output with high linearity and efficiency

June 19, 2012 // By Jean-Pierre Joosting
TriQuint Semiconductor has released two cost-effective packaged RF power amplifiers that combine high output with high efficiency, gain and linearity. These power amplifiers find applications in Very Small Aperture Terminals (VSATs) and point-to-point as well as point-to-multipoint microwave applications.

The TriQuint TGA2527-SM is highly linear and operates from 12.5 to 15.5 GHz, while the TGA4539-SM operates from 28 to 30 GHz. The TGA2527-SM offers high efficiency of typically 20% greater than competing devices, at its saturated power level (Psat) of 31.5 dBm. Both have P1dB RF power output of 30 dBm (1-W) and are housed in cost-efficient 5- x 5-mm QFN packages.

Both devices are RoHS compliant and have onboard power detectors for monitoring purposes. They are designed to be extremely easy to integrate into RF circuits and are highly rugged. The TGA2527-SM can handle an RF input power of 24 dBm CW and the TGA4539-SM can handle 22 dBm.

The TGA2527-SM and TGA4539-SM are both in production. Samples and fully-assembled evaluation fixtures are available.