Designed to operate at 4.5 – 5.9 GHz from a 50V rail, the 70W GaN HEMT is a suitable driver for the highest power C-Band radar device available: Wolfspeed’s 350W CGHV59350 GaN HEMT for 5.2 – 5.9 GHz operation, which was released in May of 2015. Delivering 90W typical POUT at 50V, in addition to 55% drain efficiency at 14 dB power gain, the internally matched CGHV59070 offers a general purpose broadband solution for a variety of RF and microwave applications, and is suited for use in linear and compressed amplifier circuits in marine radar, weather monitoring, air and maritime vessel traffic control, and port security applications.
“The market release of the new 70W CGHV59070 pre-driver completes Wolfspeed’s C-Band radar lineup of pre-drivers, drivers, and output stages, enabling 1 kW, all-GaN SSPAs for C-Band radar applications,” said Jim Milligan, RF and microwave director, Wolfspeed.
Wolfspeed’s CGHV59070 can be supplied in a ceramic/metal flange or pill package, and can be shipped individually, or alongside or installed on a test board.
Compared to conventional silicon (Si) and gallium arsenide (GaAs) devices, Wolfspeed’s GaN-on-SiC RF devices claim higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths, all of which are critical for achieving higher performing microwave and RF products needed for emerging systems across a variety of applications.
Wolfspeed is a Cree Company; Infineon has announced its intention to acquire Wolfspeed; see story here.