Designed for up to 8 GHz operation, the HEMT die exhibits 12 dB typical small signal gain at 8 GHz, 17 dB typical small signal gain at 4 GHz, and 30W typical P SAT. Due to the superior material properties of GaN compared to silicon and gallium arsenide (GaAs), this device also delivers higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths than Si and GaAs transistors.
As such, the CGH80030D is ideal for use in a diverse range of applications, including: UHF-, L-, S-, and C-Band radar; broadband, public safety, and ISM (industrial, scientific, and medical) amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and two-way private radios, among others.
“The increasingly widespread adoption of GaN-on-SiC RF technology in applications including: military and aerospace systems, telecom base stations, wideband test equipment, civil radar, and medical applications is driving R&D efforts at Wolfspeed,” said Jim Milligan, RF and microwave director, Wolfspeed.
Wolfspeed adds that its GaN-on-SiC RF power transistors have completed qualification testing to demonstrate compliance with NASA EEE-INST-002 Level 1 reliability standards for satellite communications and radar equipment.