GaN power transistor switches at high frequency switching for DC-DC power conversion

September 19, 2013 // By Paul Buckley
Efficient Power Conversion Corporation has introduced the newest member of its family of enhancement mode gallium nitride power transistors.

The EPC2018 is a 5.76 mm 2, 150-V DS, 12-A device with a maximum R DS(on) of 25 milliohms with 5V applied to the gate.  The GaN power transistor delivers high performance due to its ultra high switching frequency, low R DS(on), low Q G and in a small package.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2018 is much smaller and has  superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, as well as many other circuits needing nanosecond switching speeds.

The EPC2018costs $6.54 (1000) and is available through Digi-Key.