GaN RF transistors; efficiency and wideband power for mobile broadband

May 18, 2016 // By Graham Prophet
Ampleon (Nijmegen, The Netherlands) has its second generation of 50V, 0.5 µm GaN on SiC (gallium nitride on silion) RF power transistors, dedicated for mobile broadband applications.

Providing a 5% improvement in power efficiency compared to LDMOS-based devices, and enabling high-power multiband applications, this GaN family also offers a size reduction in the order of 30 to 50%, when compared to similar LDMOS transistors. PA designers can now more easily find the perfect fit for each particular set of requirements, in terms of efficiency, size, power and cost. The portfolio will include transistors with 15 to 600W of peak power for all major cellular bands between 1.8 and 3.8 GHz.


CLF2H27LS-140 is a single-ended transistor providing 140W of peak power in band 41. Other devices currently sampling include the CLF2H1822LS-160 and CLF2H1822LS-220 suitable for 1.8 to 2.2 GHz multiband applications, and the CLF2H38LS-140 and CLF2H38LS-40 (driver) for 3.4 to 3.8 GHz applications with 140 and 40W outputs at P3dB. The device family meets the needs of RF PA designers developing high efficiency or multiband Doherty power amplifiers for use in wireless infrastructure networks. Application support includes ready-to-go Doherty reference designs optimized for mass-production.