GaN-on-silicon LEDs open path to cheaper lighting products

April 09, 2013 // By Graham Prophet
Plessey has announced that samples of its Gallium Nitride (GaN) on silicon LED products, coded PLW111010) are now available.

These entry level products are the first LEDs manufactured on 6-inch GaN on silicon substrates to be commercially available anywhere in the world. Plessey is using its proprietary large diameter GaN on silicon process technology to manufacture the LEDs on its 6-inch MAGIC (Manufactured on GaN I/C) line at its Plymouth, England facility. This line, using standard semiconductor manufacturing processing, anticiaptes yield target figures of greater than 95% and fast processing times providing a significant cost advantage over sapphire and silicon carbide based solutions for LEDs of similar quality.

For engineering sample requests, please go to the Plessey website,