GaN Systems has added to its range of E-mode GaN-on-Silicon high power transistors based on its three core proprietary technologies. The new GaN high-power enhancement-mode device, GS65516T, claims the highest current capability on the market at 60A.
The GS65516T 650V E-mode power switch features GaN Systems’ topside cooling configuration announced in March this year, which allows the device to be cooled using familiar and conventional heat sink or fan cooling techniques. It is based on the company’s Island Technology die design, packaged in low inductance and thermally efficient GaNPX packaging and measures 9.0 x 7.6 x 0.45 mm. Features of the GS65516T 650V E-HEMT include reverse current capability, integral source sense and zero reverse recovery loss. Dual gate pads help design engineers achieve optimal board layout. The GS65516T suits high frequency, high efficiency power conversion applications such as on-board battery chargers, 400V DC-DC conversion, inverters, uninterruptible power supplies (UPS) and VFD motor drives, AC-DC power supplies (PFC and primary) and VHF small form factor power adapters.
“GaN is real and happening right now,” according to Girvan Patterson, President, GaN Systems. “... hundreds of leading companies across the globe have embraced our technology to make sure they are among the first to market with new products that bring the benefits of GaN to products ranging from solar inverters to ultra-slim TVs. The major players are well aware that gallium nitride device technology is a true game-changer. GaN Systems’ core IPs make our devices easier for designers to work with, and we are now seeing real products that harness GaN’s power come to market. For example, on our stand [at the PCIM 2015 exhibition], we are showing a vehicle power inverter from leading US technology company, DRS Technologies, a 2 kWh tactical power pack from Virideon, and a 5kW 3-phase inverter power module from LS Industrial Systems of Korea.”
GaN Systems; www.gansystems.com