GaN Systems’ gallium nitride power devices, now through distribution

September 05, 2014 // By Graham Prophet
Mouser Electronics has added GaN Systems to its panel of suppliers, and the company’s high power transistors will now be available to to design engineers through that channel: they are positioned as “ushering in era of smaller, lighter and more efficient power electronics”

GaN Systems' gallium nitride power transistors are based on its proprietary Island Technology and claim significant advantages over traditional silicon MOSFETs and IGBTs to bring smaller, lighter and more efficient power electronics to numerous applications.

The Island Technology IP incorporates the wide-bandgap and superior switching speed, temperature, voltage and current performance of gallium nitride into a unique structure that maximises wafer yields and produces highly efficient transistors up to four times smaller and at lower cost than tradition design approaches. In order to take advantage of the Island Technology devices’ intrinsic fast switching and dense current carrying capability, GaN Systems also designed GaNPX packaging, which has no wire bonds, minimising inductance and thermal resistance and increasing reliability.

With current ratings from 8A to 200A, GaN Systems offers a comprehensive product range of gallium nitride devices to the global market. Initial products distributed by Mouser Electronics will include the GS61008P, 80A/5 mΩ normally-off 100V GaN transistor, and a low inductance, thermally-efficient 650V transistor, the GS66508P, with reverse current capability, zero reverse recovery charge and source-sense for optimal high speed design.

Mouser; www.mouser.com/gan-systems/

see also; 100V, normally-off, GaN transistors in low inductance, thermally-efficient packaging