Half-bridge gate drive IC for 600V applications

May 08, 2013 // By Graham Prophet
Infineon has introduced a “Compact” member of its EiceDRIVER family; the 2EDL EiceDRIVER, intended for a variety of power applications.

The 2EDL EiceDRIVER Compact half-bridge gate driver is intended for applications with a blocking voltage of 600V. Equipped with a very fast bootstrap diode and resistor, the components enable high efficiency in a very compact construction. This makes them ideal for space-saving installations in consumer electronics as well as household appliances and industrial designs. The new family of driver ICs, designed for use with power semiconductors such as in the newest CoolMOS generation, exhibit improved switching behaviour. “With the introduction of the Compact products, we can offer an in-depth driver IC program that differentiates by application as well functionality. The EiceDriver Compact is aimed directly at the mass market in consumer as well as industrial areas,” said Oliver Hellmund, responsible for marketing the EiceDRIVER at Infineon. Depending on current strength and packaging, the price per component ranges from €0.31 to €0.61 (10,000). The family also includes the EiceDRIVER Safe, which is designed exclusively to meet high demands for security and reliability in the industrial market. The EiceDRIVER Enhanced class offers improved functionality in the industrial and, to a degree, the consumer markets.

The seven devices in the 2EDL EiceDriver Compact class are designed for use with IGBTs as well as with MOSFETs. They are available in DSO-8 and DSO-14 packages. The output current for the new devices is set to 0.5 or 2.3A. With the integrated low-resistance and very fast bootstrap diode, the 2EDL EiceDRIVER sets new standards for driver ICs with more than 2A output current. The bandwidth of the EiceDRIVER range enables a variety of applications. Driver ICs in the DSO-14 assembly also have extended creepage. This means they meet requirements for higher protection classes and can be used in industrial applications.

The level-shift is based on Silicon-on-Insulator technology. This places the active transistor layer on the top of an insulator, which results in outstanding robustness against latch-up effects when the component is exposed to extreme temperature and