High frequency Gallium Nitride FETs drive wireless power demonstration system

August 13, 2012 // By Paul Buckley
Efficient Power Conversion Corporation (EPC) has unveiled a high efficiency wireless power demonstration system utilizing the high frequency switching capability of gallium nitride transistors. eGaN FETs from EPC are an ideal solution for these systems because of their ability to operate efficiently at high frequency, voltage, and power.

Highly resonant wireless power transfer was invented by the founders of WiTricity, and WiTricity licenses its intellectual property to companies seeking to build products based on this exciting new technology. Capable of transferring power over distance, WiTricity technology enables a wide range of consumer, medical, industrial and automotive applications. Products using highly resonant wireless power transfer can meet stringent regulatory guidelines, and is safe for people and animals.

Many wireless charging products now in the market use traditional magnetic induction coils with operating frequencies between 100-300 kHz, and Class E, F and S amplifier converter topologies Recently, organizations such as the Consumer Electronics Association and A4WP (Alliance for Wireless Power) have called for a higher frequency standard (6.78 MHz) for wireless charging systems. At higher frequencies, traditional silicon-based power transistors (MOSFETs) approach the limit of their switching capability. EPC’s eGaN FETs offer higher efficiency compared to MOSFETs at these higher frequencies.

This wireless power demonstration system jointly developed by EPC and WiTricity is a class-D power system operating at 6.78 MHz, and capable of delivering up to 15 W to a load. The purpose of this demonstration system is to simplify the evaluation process of the wireless power technology. The system includes all the critical components in a single system that can be easily connected to demonstrate the powering of a device with wireless energy transfer.

www.epc-co.com