High performance common-drain MOSFETs help battery pack designers simplify designs

October 18, 2013 // By Paul Buckley
Alpha and Omega Semiconductor Limited (AOS) has released a dual MOSFET family in the common-drain configuration in both DFN 5x6 and Micro-DFN 3.2x2 packages.

The devices are suitable for battery pack applications where two n-channel MOSFETs are connected back-to-back for safe charging and discharging as well as voltage protection. The products provide ultra-low RSS (source-to-source resistance) of less than 10mOhms at 10 V gate drive. AON6810, AON6812, and AOC4810 provide ideal solutions for enhancing battery pack performance in the latest generation ultrabooks and tablets, where low conduction loss is a must for optimizing battery life.

The new devices use the latest AlphaMOS technology to accomplish low RDS(ON) along with 4 kV ESD protection to enhance battery pack safety. AON6810 and AON6812 use a bottom-exposed DFN5x6 package for enhanced thermal capability. The AON6812 features a low 8mOhm max total RSS (source-to-source) resistance at 10V drive. Rated with a 30 V breakdown voltage, it is capable of charging and discharging a laptop battery pack with the least amount of power loss and heat dissipation. The AON6810 provides an extra level of protection with an internal temperature sense diode that provides first-hand thermal information to the battery control IC. By utilizing the temperature sense pins of AON6810, designers can accurately monitor the MOSFETs’ thermal condition in a real time basis to prevent any abnormal overheating.

To meet the demand of ultra-thin battery packs, the AOC4810 takes advantage of AOS’s innovative Micro-DFN package, which features an ultra-low profile of 0.4 mm. Unlike conventional CSP (chip scale packaging), the Micro-DFN eliminates the risk of die chipping by encapsulating the silicon to provide full protection to the die as well as providing excellent moisture isolation. When board space is a key concern, AOC4810 provides a great option to further enhance power density. With dimensions of only 3.2 mm x 2 mm, AOC4810 offers a maximum RSS level of 8.8 mOhms to minimize conduction loss and heat dissipation.

The AON6810, AON6812, and AOC4810 are all RoHS and Halogen-Free compliant.


All devices are immediately available in production quantities with a lead-time