High power C-Band GaN HEMTs replace TWTs

November 04, 2014 // By Jean-Pierre Joosting
Cree claims to offer the industry’s first GaN transistor for tropospheric scatter (troposcatter) communications applications rated for 200 W continuous wave (CW) and 4.4 to 5.0GHz operation. The CGHV50200F GaN high electron mobility transistor (HEMT) is also the industry’s highest power transistor for C-Band applications, such as satellite communications.

The 50 Ohm, internally matched 200 W GaN HEMTs deliver high power, high efficiency, high gain, and wide bandwidth performance. Exhibiting 180 W typical PSAT, 11.5 dB typical power gain and 48% typical power efficiency, these transistors finally allow solid state power amplifiers (SSPAs) to effectively replace traveling wave tube (TWT) amplifiers in satellite broadcasting systems.

Featuring a smaller, lighter footprint and a significantly longer lifespan than TWTs, GaN-enabled SSPAs can reduce overall system weight and mitigate both operational and replacement costs.

The 200W CGHV50200F GaN HEMTs are supplied in a ceramic/metal flange package (type #440215) measuring 23.75—24.26mm (0.935—0.955 inches) by 23.01mm (0.906 inches) including the gain and drain or 17.25—17.55mm (0.679—0.691 inches) without.