High-power, high-performance 650V NPT IGBTs from Microsemi

July 15, 2013 // By Graham Prophet
Fast and efficient 40A, 70A and 95A transistors for industrial applications deliver the industry’s best switching loss performance, makers claim

Microsemi's next-generation of 650V non-punch through (NPT) insulated bipolar gate transistors (IGBTs), offered in 45A, 70A and 95A current ratings is designed for operation in harsh environments and is particularly well-suited for industrial products such as solar inverters, welders and switch mode power supplies. They improve efficiency by delivering the industry’s best loss performance—approximately 8% better than the closest competitor’s IGBT. The NPT IGBTs also enable extremely high switching speeds of up to 150 kHz, which are further improved when the transistors are paired with Microsemi’s silicon carbide (SiC) free-wheeling diodes. These 650V NPT IGBTs allow developers to reduce total system costs by replacing more costly 600V to 650V MOSFETs for lower speed applications up to 150 KHz.

All of the devices in the next-generation 650V product family are based on Microsemi's advanced Power MOS 8 technology and use a state-of-the-art wafer thinning process. This enables a significant reduction in total switching losses and allows the devices to operate at fast switching frequencies compared to competitive solutions.

The NPT IGBTs are easy to parallel (positive temperature coefficient of Vcesat) to improve reliability in high current modules. The devices are also short circuit withstand time rated (SCWT), providing reliable operation in harsh industrial environments. They come in a variety packages including TO-247, T-MAX and modules.

Microsemi, www.microsemi.com