High-speed, high current gate driver from IXYS RF

June 12, 2013 // By Graham Prophet
Distributor RFMW now has design and sales support for the IXRFD630 from IXYS RF. This high speed, high-current CMOS gate driver is specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths.

The IXYS IXRFD630 can source and sink 30A of peak current while producing voltage rise and fall times of less than 4 nsec and minimum pulse widths of 8 nsec. The driver input is compatible with TTL or CMOS and is fully immune to latch-up over the entire operating range. Designed with small internal delays, cross conduction or current shoot-through is virtually eliminated. Low quiescent current and a wide operating voltage range make the IXRFD630 unmatched in performance and value. The surface mount IXRFD630 is packaged in a low inductance RF package to minimise stray lead inductances for optimum switching performance in applications such as pulse generators, pulse laser diode drivers and switch mode supplies.

RFMW; www.rfmw.com