High voltage GaN transistors deliver high power

May 14, 2012 // By Jean-Pierre Joosting
A range of European manufactured Gallium Nitride (GaN) high electron mobility transistors is available from UK specialist RF and microwave component distributor, Admiral Microwaves. These high voltage (50-V), unmatched devices are aimed at a variety of general purpose and broadband RF power applications, including radar and telecommunications systems. The GaN HEMT process enables stable power outputs at higher voltages.

The CHK025A GaN transistor features 25 W output power, 55% maximum power added efficiency (PAE) and wideband capability up to a frequency of 5 GHz, compatible with both pulsed and carrier wave operation modes. With a drain to source voltage of 50 V, quiescent drain current is 200 mA.

The CHK040A-SOA transistor offers 40 W minimum output power (50 W maximum), 55% PAE, and a wideband capability up to 3.5 GHz. With a drain to source voltage of 50 V, quiescent drain current is quoted at 300 mA.

The CHK080A device contains two identical GaN transistors to provide 80 W output power, 55% PAE and a frequency range up to 3.5 GHz, compatible with both pulsed and CW operation. With a drain to source voltage of 50 V, quiescent drain current is 600 mA, split equally across both transistors.

All devices in this range are supplied in a low parasitic, low thermal resistance, ceramic package with metal flange, designed for easy mounting on to a thermal heat sink, also used as main electrical ground. These components require additional external matching circuitry.

Designed and manufactured in Europe by United Monolithic Semiconductor, on a 0.5-µm gate length GaN HEMT process, the transistors are RoHS and REACH compliant.

www.admiral-microwave.co.uk