The EV5A16B is a stacked solution, with two 16Mb MRAM devices from Everspin Technologies and is offered in a 54 pins stacked-package TSOP. Available in commercial (0°C to 70°C) and Industrial (-40°C to 85°C) temperature ranges, the MRAM technology offers SRAM-compatible, 35-nsec read/write timing with data retention and endurance and can be used with microprocessors, DSP, storage systems, instruments, and FPGAs.
e2v comments that this stacked-package MRAM will have a significant impact on its customers’ systems by addressing the industry requirements for a high-density memory, available in a small footprint with the ability to increase system performance.
Everspin Technologies designs and makes Magnetoresistive RAM (MRAM) and Spin Torque MRAM (ST-MRAM) for markets and applications where data persistence and integrity, low latency, and security are paramount. Everspin claims a lead in both in-plane and perpendicular magnetic tunnel junction (MTJ) ST-MRAM bit cells, and aims to proliferate MRAM and ST-MRAM as mainstream embedded memories for use in MCUs, GPUs, DSPs, Application, Processors, and ASICs; www.everspin.com