This is beneficial in applications with low stray-inductance where full Advanced Active Clamping – a method invented by Concept for shutting down IGBTs or MOSFETs in a controlled manner under any circumstances - may not be necessary.
Concept’s SCALE-2 IGBT driver cores deliver cost, performance, size and reliability benefits. SCALE-2+ driver technology offers high levels of integration by including an integrated trigger mechanism which limits IGBT MOSFET Collector-Emitter, or MOSFET Source-Drain voltages in the event of a short circuit.
Explains Michael Hornkamp, Director Regional Marketing, Concept: “We have implemented SSD on-chip without any additional external circuitry by controlling the on-chip high-side N-Channel booster stage. We increase the output impedance of the gate driver which enables the IGBT or MOSFET to turn off with a reduced di/dt, thereby limiting the Collector-Emitter or Source-Drain overvoltage. As a result, our drivers have integrated, cost-effective, short-circuit protection as well as increased flexibility and reduced size.”
The first product to ship with the SCALE-2+ chip set is Concept’s 2SC0106T2A0-12. This is a high-performance two-channel IGBT/MOSFET gate driver core for 1200V IGBTs in the 37 kW to 110 kW power range. The 2SC0106T2A0-12 is suited for servo drives used in industrial applications, UPS and solar inverters. It meets IEC 61800-5-1 and IEC 60664-1 standards for reinforced insulation.
CT-Concept Technologie is a supplier of IGBT drivers for mid- to high-power applications, such as industrial drives, renewable energy, traction and automotive equipment; www.IGBT-Driver.com