IGBT/MOSFET gate drive coupler saves power while reducing mounting area by 50 percent

February 13, 2013 // By Paul Buckley
Toshiba Electronics Europe (TEE) has unveiled a photocoupler that will reduce PCB space and power consumption in IGBT and MOSFET designs that need galvanic isolation. Target applications include factory automation equipment, motor drives, digital home appliances and photovoltaic power micro-inverters. 

The TLP152 gate drive coupler is designed to directly drive IGBTs and power MOSFETs without the need for additional components. A miniature S06 package reduces mounting area by 50% compared to the widely used SDIP packaged devices. In addition, by lowering minimum supply voltage to 10 V, the new coupler also helps to reduce power consumption.     

Toshiba's advanced SO6 package provides a minimum isolation voltage of 3750 Vrms and is compatible with reinforced insulation requirements of international safety standards. Guaranteed minimum creepage and clearance distances are 5 mm and internal insulation thickness is 0.4 mm. An internal noise shield provides a guaranteed minimum common mode transient immunity of +/-20 kV/μs.     

The TLP152 is compatible with a wide 10 V to 30 V input range that minimizes the need for additional power conversion circuitry. Maximum supply current is 3 mA. A buffer logic type totem pole output can deliver a maximum peak output current of +/-2.5 A     

Designed for high-speed operation, the TLP152 has a maximum propagation delay of 200 ns. Construction is based around a GaAlAs infrared LED optically coupled to an integrated high-gain, high-speed photodetector IC. The S06 package has dimensions of 7.0 mm x 3.7 mm x 2.1 mm and the guaranteed operation temperature ranges from -40° to 100°C.     

Visit Toshiba at www.toshiba-components.com