Compared to available alternatives, Infineon says, the FETS offer reduced switching losses (E OSS) from 27 to 50%. In a flyback based charger application the technology leads to up to 3.9% higher efficiency with device temperature is reduced by up to 16K. In comparison to the previous 650 V C6 technology it offers a 2.4% gain in efficiency and 12K lower device temperature.
An integrated Zener diode ensures an increased ESD ruggedness of up to HBM Class 2 level. The 700V CoolMOS P7 has low RDS (on)*Q g and R DS(on)*E OSS . Compared to C6 technology, the family features an additional extra 50 V blocking voltage.
Keeping the ease-of-use in mind, the technology has been developed with a V GSth of 3V and a very narrow tolerance of ±0.5V. This makes the new P7 family very easy to design-in and enables the usage of lower gate source voltage, which makes it easier to drive and leads to less idle losses.
The 700 V CoolMOS P7 family is available with a range of R DS(on) and package combinations including 360 mΩ up to 1400 mΩ in IPAK SL, DPAK and TO-220FP.