Infineon claims lowest FET resistance at 80V and 100V

February 06, 2015 // By Graham Prophet
Infineon Technologies’ OptiMOS™ 5 range now has 80V and 100V variants, power MOSFETs optimised for high switching frequencies especially in synchronous rectification applications for telecom and server power supplies; as well as in industrial applications such as solar, low voltage drives and power adapter.

These OptiMOS 5 MOSFETs claim the industry’s lowest on-state resistance (RDS(on)) – up to 45% reduction for 80V and up to 24% reduction for 100V compared to the previous generation. Due to the lower resistance there is significantly less need to parallel parts, and designs can achieve higher levels of power density and energy efficiency.

In comparison to the previous generation, the OptiMOS 5 80V variant offers 38% reduction in output charge and the OptiMOS 5 100V variant a 25% reduction. Less output charge means reduced switching losses and lower voltage overshoot in hard switching topologies and synchronous rectification. The reduction in gate charge of 24% for 80V and 29% for 100V also reduces switching losses especially at light load operation and in applications requiring high efficiency throughout the whole load range, such as micro-inverters and power optimisers for solar applications.

OptiMOS5 80V and 100V are offered in seven different packages: SuperSO8, S308, TO-Leadless, TO-220, TO-220 FullPAK, D²PAK and D²PAK 7Pin with RDS(on) ranging from 1-4 mΩ, 4-8 mΩ and 8-2 mΩ for 80V and 1-4 mΩ, 4-8 mΩ and 8-10 mΩ for 100V.