The high-speed F5 IGBT, paired with the silicon carbide boost diode in the PFC circuit, boosts performance and also drives down the cost of external passive components. The current rating of this CIP (converter + inverter + power factor correction) topology housed in an integrated power module is 10A at 80° C heat sink temperature. The flowIPM 1B CIP 600 V module enables OEMs to reduce overall system size, cost, and time to market. It also features an inverter gate drive with a bootstrap circuit for high-side power supply, as well as emitter shunts (30 mΩ) for improved motion control.
The flowIPM 1B CIP 600 V modules come in 17 mm flow 1B housings. Versions in the 12 mm housing, with Press-fit pins and with phase-change material, are available on request.