Intelligent power modules for motor drivers/inverters

December 16, 2014 // By Graham Prophet
A series of power modules from Rohm includes IGBT based modules for low or high speed operation as well as MOSFET based IPMs which incorporate ROHM’s proprietary Low Ron SuperJunction MOSFET (PrestoMOS). The full line-up includes 10A,15A and 20A versions of the 600V IGBT-IPM. 30A versions are under development.

This IPM series combines several components such as gate drivers, bootstrap diodes, IGBTs or Power MOSFETs (PrestoMOS), fly wheel diodes as well as various protection functions within one compact HSDIP25 package. Featuring an aluminium-based Silicon-on-isolator(SOI) technology, the module provides enhanced high-voltage capacity, high heat conductivity and low leak current and, at the same time, prevents latch-up. The IC has a range of protection attributes such as a current limit for the bootstrap diode, under voltage lock-out for floating supply, fault output, thermal shut-down and short circuit protection as well as a FWD (IGBT version) to eliminate flyback. Designers can choose from different set-ups – with integrated IGBT or MOSFET - in order to identify the ideal solution for their application and save time and costs.

Features include;

- Energy-save for IPLV, SEER, APF

- Low saturation voltage IGBT (opt.)

- Low on-resistance SJ-MOSFET (opt.) for improved conduction loss

- Low forward voltage and trr FWD

- Built-in gate driver and bootstrap diode

- SOI technology for HVIC for low leak current and latch-up prevention

- Current limit for bootstrap diode, suppression of rush current

- UVLO, SCP, TSD, fault output

- Input interface 3.3V, 5V

- Ceramic isolation

- 1500Vrms isolation, low thermal resistance

- Compatible HSDIP25 package for easy design-in

Rohm Semiconductor ; www.rohm.com/eu