IP for low-power ROM and RAM in eFlash process at 90 nm

April 09, 2014 // By Graham Prophet
Dolphin Integration has announced its TSMC-sponsored sROMet and DpRAM generators for 90 nm LP eFlash; the high-density and low-power foundry-sponsored generators, sROMet PHOENIX and DpRAM ERIS (HVT and SVT), are now available in the eFlash process variant for the 90 nm node.

PHOENIX and ERIS are designed to reach the highest density and to offer low power consumption features. The Phoenix products is a metal-programmable ROM generator, optimised for low power, that defines devices with operating voltage: 1.2V ±10%, in the range from 16k up to 1024k. Thanks to a proprietary bit cell, the Phoenix ROM allows a gain up to 10% in density versus alternative solutions at 90 nm and gives a drastic reduction of the power consumption thanks to its dual voltage capability.

The DpRAM allows ultra-low leakage thanks to its HVT bitcell; the Eris generator builds dual port RAM that is very high density, and optimised for low power.

The range of memory options for the eFlash process is completed by a unique cache controller, which gives a three-fold performance increase, in speed and power, compared to a stand alone eFlash memory.

Dolphin Integration; www.dolphin.fr