With dimensions 75% (in width and length) compared to the previous TO-3P(L) package, this provides product designers with greater flexibility, whilst maintaining package power (Pc) at 150W.
The 2SA1943N transistor has a maximum collector-emitter voltage rating of (V CEO) of -230V and continuous collector current rating (I C) of -15A, while the 2SC5200N has a maximum V CEO of 230V and an I C of 15A.
The 2SA1943N transistor has a minimum DC current gain, h FE , figures of of 80 (at V CE = -5V and I C = -1A) and 35 (at V CE = -5V and I C = -7A), while the 2SC5200N h FE figures of 80 (at V CE = 5V and I C = 1A) and h FE of 35 (at V CE = 5V and I C = 7A). They ofeofer high linearity of h FE and also V BE. Both devices achieve a typical transition frequency (f t) of 30 MHz. The smaller TO-3P(N) package measures 15.9 by 40.5 by 4.8 mm.
Toshiba Electronics Europe; http://toshiba.semicon-storage.com