PIN diode designs suffer from large attenuation shifts over temperature. The RFMD RFSA2013's integrated temperature compensation overcomes this issue. Built on SOI technology, linearity exceeds that of FET based designs. IIP3 linearity of the RFSA2013 is >50 dBm. SOI also provides superior, class 1C ESD protection. With insertion loss of 2.6 dB and attenuation range of 30 dB, this attenuator serves 5V applications where temperature variations are a design concern. For 3.3V applications, the RFSA2023 provides the same performance. The device spans a frequency range of 50 MHz to 4 GHz.