Optimized for 30 GHz satellite communications, the CMD162 boasts a typical noise figure of 1.7 dB with a small-signal gain of 22 dB and an output 1 dB compression point of +7 dB. This amplifier delivers high performance with high efficiency, reducing typical industry DC power dissipation for a device in this frequency band from approximately 340 mW down to 50 mW.
Two other LNAs include the CMD157 (die) and CMD157P3 (packaged) GaAs MMICs for applications from 6 to 18 GHz. These broadband devices each feature a low noise figure of 1.5 dB, deliver greater than 25 dB of flat gain, and have a corresponding output 1 dB compression point of +10 dBm.
Both the CMD157 and the CMD157P3 are 50 Ohm matched designs, thus eliminating the need for external DC blocks and RF port matching. The CMD157 is suitable for chip-and-wire applications, whereas the CMD157P3 is housed in a leadless RoHS compliant 3- x 3-mm plastic surface mount package. The amplifiers are biased with a single positive voltage of +3.0 V at 52 mA. RF power can be applied at any time.