Low-loss, ultra miniature power MOSFETs deliver improved power efficiency with a smaller form factor in portable devices

April 10, 2012 // By Paul Buckley
Renesas Electronics has introduced eight new low-loss P- and N-channel power metal-oxide-semiconductor field-effect-transistors (MOSFETs) for use in portable electronics including smartphones and tablets.

With industry-leading low on-resistance, the new devices include the 20V (VDSS) µPA2600 and the 30V µPA2601, equipped in ultra compact 2 mm × 2 mm packages to deliver increased power efficiency and miniaturization within smaller mobile device form factors.

With the increasing popularity of high-functionality smartphones and user expectations for seamless experiences with these devices, demand is increasing for smaller, thinner form factor devices with lower power consumption that enable longer battery life between charges. To meet these demands, designers are turning to power MOSFETs that feature lower on-resistance for use in charge/discharge control, RF power amplifier on/off control, and overcurrent cutoff switches, while supporting large currents.

The new µPA2600 and µPA2601 MOSFETs achieve these demands for further miniaturization and industry-leading low on-resistance in portable devices while reducing mounting areas in a wide variety of applications, including load switches (which turn power applied to ICs on or off) and charge/discharge control in portable devices and on/off control and overcurrent cutoff switches in RF power amplifiers (amplifiers for high-frequency signals).

A variety of device types, with differing voltages and polarities, such as power MOSFETs, are required to match the specifications of power supplies used in portable devices, including smartphones. In response to these evolving needs, Renesas has been working to reduce on-resistance and create even smaller packages, and provides an extensive lineup of these products.

The µPA2600 and µPA2601 MOSFETs are equipped in 2 mm × 2 mm ultra compact package and achieves an on-resistance of 9.3 m Ω (typical value at VGSS=4.5 V) for the 20 V (VDSS) µPA2600 device and 10.5 m Ω (typical value at VGSS=10 V) for the 30 V µPA2601 device, enabling power savings in end-use products.

Renesas achieved the use of 2 mm × 2 mm ultra compact packages by placing large-area high-performance chips in miniature packages and using an exposed heat sink miniature package, thus efficiently dissipating the package heat to the mounting board.