The gate-drive photocouplers are for directly driving low- to medium-power IGBTs and power MOSFETs; TLP5751 offers a peak output current of ±1.0A and can drive power MOSFETs and low-power IGBTs up to 20A. The ±2.5A TLP5752 and ±4.0A TLP5754 will drive power MOSFETs and IGBTs with current ratings to 80A and 100A respectively. Operating temperature is from -40°C to 110°C and target applications include home appliances, factory automation equipment and inverter designs where high levels of isolation and stable operation across an extended temperature range are required.
All of the photocouplers are supplied in a low-profile SO6L package. This package is 54% the height of Toshiba products that use a DIP8 package and requires just 43% the board mounting area. Despite their low height, the devices have a guaranteed creepage distance of 8 mm and an isolation voltage of 5 kV. Because the TLP57xx devices offer rail-to-rail output, they deliver stable operation and enhanced switching performance. Power supply voltage is from 15V to 30V and maximum supply current is 3.0 mA.
TLP5751, TLP5752 and TLP5754 comprise a GaAlAs infrared LED and integrated high-gain, high-speed photodetector and feature an undervoltage lockout (UVLO) function. An internal Faraday shield ensures a guaranteed common-mode transient immunity of ±35 kV/μsec. Maximum propagation delay time is rated at 150 nsec and maximum propagation delay skew at 80 nsec.
Toshiba Electronics Europe; www.toshiba-components.com