Low RDS(on) 30V MOSFET gets below 1 mΩ

December 02, 2013 // By Graham Prophet
The AP1A003GMT-HF-3 power MOSFET from Advanced Power Electronics (APEC) offers very low maximum on-resistance of only 0.99 mΩ for use in high current load switching.

The AP1A003GMT-HF-3 power MOSFET from Advanced Power Electronics (APEC) offers very low maximum on-resistance of only 0.99 mΩ for use in high current load switching.

Provided in a PMPAK5x6 package with integrated thermal pad and with a standard SO-8 footprint compatible with other enhanced 5 x 6 mm power packages, the AP1A003GMT-HF-3 power MOSFET features simple gate drive requirements, a breakdown voltage rating of 30V and a maximum drain-source current rating of 260A. It is fully RoHS-compliant and BFR/halogen-free. Samples are available now.

APEC; www.a-powerusa.com/docs/AP1A003GMT-3.pdf