Toshiba’s ‘U-MOS IX-H series’ trench process ensures that the MOSFETs achieve low on-resistances. RDS(ON) ratings are 6.5 mΩ for the 30V SSM6K513NU and 8.9 mΩ for the 40V SSM6K514NU. This allows the new products to reduce heat dissipation resulting from turn-on loss by approximately 40% when compared with Toshiba’s existing products, such as the SSM6K504NU. The FETs are suitable for use in electric power switching applications over 10W, including small-size mobile devices that meet the USB Type-C and USB Power Delivery (PD) standards. Both MOSFETs are housed in SOT-1220 packages.
Toshiba Electronics Europe; www.toshiba.semicon-storage.com