The enhancement mode MOSFETs are based on Toshiba’s π-MOS VIII (Pi-MOS-8) eighth generation planar semiconductor process, which combines high levels of cell integration with optimised cell design. This technology supports reduced gate charge and capacitance without losing the benefits of low R DS(ON).
These MOSFETs are low-current supplements to Toshiba’s existing DTMOS IV line-up of 800V super junction DTMOS4 devices. The 2.5A TK3A90E and 4.5A TK5A90E feature V DSS ratings of 900V and have respective typical R DS(ON) ratings of 3.7Ω and 2.5Ω. Both the 4.0A TK4A80E and 5.0A TK5A80E devices offer V DSS ratings of 800V with respective typical R DS(ON) ratings of 2.8Ω and 1.9Ω.
These MOSFETs offer an ultra-low maximum leakage current of only 10 μA (V DS = 60V) and a gate threshold voltage range of 2.5V to 4.0V (when V DS is 10V and drain current is 0.4 mA). All of the devices are supplied in a standard TO-220SIS form factor.
Toshiba Electronics Europe; www.toshiba.semicon-storage.com