Low reverse current Schottky diodes for boost circuits

March 13, 2017 // By Graham Prophet
Toshiba Electronics Europe adds six low reverse-current Schottky Barrier Diodes (SBDs), with a peak reverse voltage of 40V; the CCS15F40, CUS15F40, CBS10F40, CUS10F40, CTS05F40, and CUS05F40 are suitable for voltage boosting circuits in white LED backlights and for LCDs in portable products.

The reverse current of the CCS15F40 is 25 μA (max), which is an approximately 87% reduction compared to conventional products. This SBD’s thermal runaway temperature is 35°C higher than seen in conventional devices, contributing to stable circuit operations. The CCS15F40 features fast switching due to a low total capacitance of 130 pF (typ.) @VR=0V. A low reverse current helps to lower power consumption of the devices, making thermal runaways unlikely, even in high-temperature environments.

 

In addition to the industry standard SOD-323 package, Toshiba has introduced leadless surface mounting packages (CST2C, CST2B) and SOD-882 packages (CST2) to the SBD line-up, ideal for applications where light weight, compact size, and high efficiency are of the utmost importance.

 

Toshiba Electronics Europe; www.toshiba.semicon-storage.com