Medium-power and small-signal FETs for operation at extreme temperatures

July 02, 2014 // By Graham Prophet
X-REL Semiconductor (France) is extending its XTR2N0x MOSFET family; the specialist in high-reliability and extreme-temperature integrated circuits, is introducing two new mid-power P-channel and two small-signal P- and N-channel transistors.

Intended for high-reliability, extreme temperature and extended lifetime applications such as power conversion, power management, level translation and sensor interfaces, these devices provide excellent switching and linear characteristics, as well as very low leakage current.

The mid-power P-channel transistors introduced are divided into two families depending upon the maximum operating voltage. Devices XTR2N0325 and XTR2N0350 are intended for a maximum operation drain-source voltage of -30V, whereas XTR2N0525 and XTR2N0550 can sustain drain-source voltages of up to -50V. In each sub-family, two different transistor sizes, “25” and “50”, are available providing two possible maximum drain currents.